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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2707TP
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The PA2707TP which has a heat spreader is Nchannel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer.
ORDERING INFORMATION
PART NUMBER PACKAGE Power HSOP8
Note
PA2707TP-E1 PA2707TP-E1-AZ PA2707TP-E2
Power HSOP8 Power HSOP8
FEATURES
* Low on-state resistance RDS(on)1 = 4.3 m MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 5.6 m MAX. (VGS = 4.5 V, ID = 9.0 A) * Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V) * Small and surface mount package (Power HSOP8)
PA2707TP-E2-AZ
Note
Power HSOP8
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 20 42 76 40 4.3 150 -55 to +150 19 36
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , L = 100 H, VGS = 20 0 V
THERMAL RESISTANCE
Channel to Ambient Channel to Case
Note
Rth(ch-A) Rth(ch-C)
96.2 3.13
C/W C/W
Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G17035EJ1V0DS00 (1st edition) Date Published June 2005 NS CP(K) Printed in Japan
2004
PA2707TP
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 10 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 10 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 100
UNIT
A
nA V S
1.0 12 3.3 4.1 6600 970 530 24 29 130 39
2.5
Drain to Source On-state Resistance
4.3 5.6
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Gate Resistance
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr RG
VDD = 15 V VGS = 5 V ID = 19 A IF = 19 A, VGS = 0 V IF = 19 A, VGS = 0 V di/dt = 100 A/s f = 1 MHz
52 16 18 0.8 42 41 1.2
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G17035EJ1V0DS
PA2707TP
TYPICAL CHARACTERISTICS (TA = 25C)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
100
ID(pulse) ID(DC)
Li = mit 10 ed V)
PW
=
dT - Percentage of Rated Power - %
10 0
s
r we Po
100
ip ss Di
ID - Drain Current - A
R (a D S ( o t V n)
G
S
10
80 60 40 20
1 ms
ite m Li d
at io n
10 ms
1
DC
0
20
40
60
80
100
120 140
160
0.1 0.01
TC = 25C Single pulse
0.1
1
10
100
TC - Case Temperature - C
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 96.2C/W 100
10
Rth(ch-C) = 3.13C/W
1
0.1
Single pulse Rth(ch-A): M ount ed on galass epoxy board of 1 inch x 1 inch x 0.8 mm, TA = 25C Rth(ch-C): TC = 25C
0.01 100
1m
10 m
100 m 1 PW - Pulse Width - s
10
100
1000
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
80 VGS = 10 V 60
ID - Drain Current - A
100
10 4.5 V
ID - Drain Current - A
40
1
Tch = -55C 25C 75C 150C
20 Pulsed 0 0 0.1 0.2 0.3 0.4 0.5
VDS - Drain to Source Voltage - V
0.1 Pulsed VDS = 10 V 0.01 0 1 2 3 4 5
VGS - Gate to Source Voltage - V
Data Sheet G17035EJ1V0DS
3
PA2707TP
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
3
| yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V
100 Tch = -55C 25C 75C 150C
2
10
1 VDS = 10 V Pulsed 0 -50 0 50 100 150
Tch - Channel Temperature - C
1 VDS = 10 V Pulsed 0.1 0.01 0.1 1 10 100
ID - Drain Current - A
15 Pulsed
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
15 ID = 10 A Pulsed 10
10
5
VGS = 4.5 V 10 V
5
0 0.1 1 10 100
ID - Drain Current - A
0 0 5 10 15 20
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
Ciss, Coss, Crss - Capacitance - pF
10000 Ciss
8 6 VGS = 4.5 V 4 2 0 -50 0 50 100 150
Tch - Channel Temperature - C
1000 Coss Crss 100 VGS = 0 V f = 1 MHz 10 0.1 1 10 100
VDS - Drain to Source Voltage - V
10 V
ID = 10 A Pulsed
4
Data Sheet G17035EJ1V0DS
PA2707TP
SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
30
6
VGS - Gate to Source Voltage - V
td(off) 100 tf
5 20 VDD = 24 V 15 V 6V 4 3 10 VDS 0 0 10 20 30 40 50
QG - Gate Charge - nC
VGS
10 VDD = 15 V VGS = 10 V RG = 10 0.1 1 10
td(on) tr
2 1 0
1
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
100
trr - Reverse Recovery Time - ns
1000
IF - Diode Forward Current - A
VGS = 10 V 10 0V 1
100
10 di/dt = 100 A/ s VGS = 0 V 1 0.1 1 10 100
0.1 Pulsed 0 0.2 0.4 0.6 0.8 1 1.2
0.01
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
100
IAS - Single Avalanche Current - A
120
Energy Derating Factor - %
IAS = 19 A 10 EAS = 36 mJ
100 80 60 40 20 0
VDD = 15 V RG = 25 VGS = 20 0 V IAS 19 A
1
VDD = 15 V RG = 25 VGS = 20 0 V Starting Tch = 25C 0.1 1 10
0.1 0.01
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
Data Sheet G17035EJ1V0DS
5
PA2707TP
PACKAGE DRAWING (Unit: mm)
Power HSOP8
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain
1.49 0.21
1.44 TYP.
1 5.2 +0.17 -0.2
4 0.8 0.2 S
+0.10 -0.05
6.0 0.3 4.4 0.15
0.05 0.05
0.15
1.27 TYP. 0.40
1
+0.10 -0.05
0.10 S 0.12 M
2.0 0.2
2.9 MAX.
9 4.1 MAX.
8
5
EQUIVALENT CIRCUIT
Drain
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
6
1.1 0.2
4
Body Diode
Data Sheet G17035EJ1V0DS
PA2707TP
* The information in this document is current as of June, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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